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  savantic semiconductor product specification silicon pnp power transistors 2SB628 description with to-220c package high v ceo applications low frequency power amplifier color tv vertical deflection output pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -160 v v ebo emitter-base voltage open collector -5 v i c collector current -1.5 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -45~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB628 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -160 v v (br)cbo collector-base breakdown voltage i c =-0.1ma; i e =0 -160 v v (br)ebo emitter-base breakdown votage i e =-0.1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-0.3 a;i b =-30m a -1.0 v v be base-emitter voltage i c =-0.3a ; v ce =-4v -1.0 v i cbo collector cut-off current v cb =-120v; i e =0 -1 a i ebo emitter cut-off current v eb =-4v; i c =0 -1 a h fe dc current gain i c =-0.3a ; v ce =-5v 40 200 f t transition frequency i c =-0.3a ; v ce =-5v 40 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB628 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) downloaded from: http:///


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